Electroabsorption modulator

Details Electroabsorption modulator Electroabsorption modulator

2006-11-28

2006-11-28

Harrington, Alicia M. (Department: 2873)

Optical: systems and elements

Optical modulator

Light wave temporal modulation

C359S237000, C359S245000, C359S315000, C359S316000

Reexamination Certificate

active

07142342

ABSTRACT:
The electroabsorption modulator comprises a p-i-n junction structure that includes an active layer, a p-type cladding layer and an n-type cladding layer with the active layer sandwiched between the cladding layers. The electroabsorption modulator additionally comprises a quantum well structure located within the active layer. The p-type cladding layer comprises a layer of heavily-doped low-diffusivity p-type semiconductor material located adjacent the active layer that reduces the extension of the depletion region into the p-type cladding layer when a reverse bias is applied to the electroabsorption modulator. The reduced extension increases the strength of the electric field applied to the quantum well structure by a given reverse bias voltage. The increased field strength increases the extinction ratio of the electroabsorption modulator.

REFERENCES:
patent: 5297158 (1994-03-01), Naitou et al.
patent: 6317444 (2001-11-01), Chakrabarti et al.
patent: 6664605 (2003-12-01), Akulova et al.
patent: 2003/0042476 (2003-03-01), Nakahara et al.
patent: 2003/0146440 (2003-08-01), Murata et al.

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