Electroabsorption modulator

Details Electroabsorption modulator Electroabsorption modulator

2005-10-18

2005-10-18

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C359S248000, C359S240000, C385S014000

Reexamination Certificate

active

06956232

ABSTRACT:
A semiconductor modulator is disclosed which exhibits a negative alpha parameter at low operating bias. The device includes at least two barrier layers with a quantum well layer therebetween. An additional layer is formed adjacent to the quantum well layer, the additional layer having a bulk bandgap energy greater than the quantum well layer so as to form a stepped well between the barrier layers.

REFERENCES:
patent: 5509025 (1996-04-01), Capasso et al.
patent: 5724174 (1998-03-01), Meyer et al.
Shin et al, “High-Power Electroabsorption Modulator Using Intra-Step-Barrier Quantum Wells,” Journal of Applied Physics, vol. 89, pp 1515-1517 (Jan. 15, 2001).

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