Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device
Reexamination Certificate
2011-01-25
2011-01-25
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
C257S111000, C257S358000, C257S355000
Reexamination Certificate
active
07875902
ABSTRACT:
An electro-static discharge protection device includes a first conductive type well and a second conductive type well which are formed in a surface of the first conductive type layer or a first conductive type substrate. A first high concentration second conductive type region, a first high concentration first conductive type region, and a second high concentration second conductive type region are formed in a surface of the second conductive type well. A third high concentration second conductive type region is formed in a surface of the first conductive type well. The first high concentration second conductive type region and the first high concentration first conductive type region are connected with a first power supply of a potential. The third high concentration second conductive type region is connected with a second power supply having a potential different from the potential of the first power supply. The second high concentration second conductive type region is set to a potential different from the first power supply.
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Kodama Noriyuki
Sawahata Koichi
Katten Muchin & Rosenman LLP
Pham Long
Renesas Electronics Corporation
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