Electro-optical SLS devices for operating at new wavelength rang

Details Electro-optical SLS devices for operating at new wavelength rang Electro-optical SLS devices for operating at new wavelength rang

1983-10-06

1986-08-19

Davie, James W.

357 4, 357 16, 357 61, H01L 2714, H01L 3100

Patent

active

046072721

ABSTRACT:
An intrinsic semiconductor electro-optical device includes a p-n junction intrinsically responsive, when cooled, to electromagnetic radiation in the wavelength range of 8-12 um. The junction consists of a strained-layer superlattice of alternating layers of two different III-V semiconductors having mismatched lattice constants when in bulk form. A first set of layers is either InAs.sub.1-x Sb.sub.x (where x is aobut 0.5 to 0.7) or In.sub.1-x Ga.sub.x As.sub.1-y Sb.sub.y (where x and y are chosen such that the bulk bandgap of the resulting layer is about the same as the minimum bandgap in the In.sub.1-x Ga.sub.x As.sub.1-y Sb.sub.y family). The second set of layers has a lattice constant larger than the lattice constant of the layers in the first set.

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