Electro-optical nanocrystal memory device

Details Electro-optical nanocrystal memory device Electro-optical nanocrystal memory device

2006-10-17

2006-10-17

Paik, Steven S. (Department: 2876)

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07121474

ABSTRACT:
A memory device. The memory device includes a substrate and an array of nanocrystals formed proximate to the substrate. The array of nanocrystals is electrically insulated to hold charge carriers therein. A presence of charge carriers within the array of nanocrystals represents a first logic state of the memory device. An absence of the charge carriers within the array of nanocrystals represents a second logic state of the memory device. The presence and the absence of the charge carriers is determinable via directing a beam of photons onto the array of nanocrystals and sensing an optical response.

REFERENCES:
patent: 5323019 (1994-06-01), Dutta et al.
patent: 5508829 (1996-04-01), Freeouf et al.
patent: 5550670 (1996-08-01), Zielinski et al.
patent: 5825525 (1998-10-01), Harwit
patent: 5920419 (1999-07-01), Starck et al.
patent: 6100543 (2000-08-01), Sakata
patent: 6301155 (2001-10-01), Fujiwara
patent: 6309907 (2001-10-01), Forbes et al.
patent: 6337117 (2002-01-01), Maenosono et al.
patent: 6475886 (2002-11-01), Kim et al.
patent: 6574144 (2003-06-01), Forbes
patent: 6586785 (2003-07-01), Flagan et al.
patent: 6633370 (2003-10-01), Lawandy
patent: 6753568 (2004-06-01), Nakazato et al.
patent: 6781690 (2004-08-01), Armstrong et al.
patent: 6808986 (2004-10-01), Rao et al.
patent: 6846565 (2005-01-01), Korgel et al.
patent: 2003/0111672 (2003-06-01), Cavins et al.
patent: 2004/0002202 (2004-01-01), Horsky et al.
patent: 2004/0024959 (2004-02-01), Taylor
patent: 2005/0122775 (2005-06-01), Koyanagi et al.
Miller, D. A. B. et al., “Field-Effect Transistor Self-Electrooptic Effect Device: Integrated Photodiode, Quantum Well Modulator and Transistor,”IEEE Photonics Technology Letters, vol. 1, No. 3, (Mar. 1989), pp. 62-64.
Partovi, A. et al., “Electroabsorption in II-VI Multiple Quantum Wells,”Appl. Phys. Lett.,vol. 58, No. 4, (Jan. 28, 1991), pp. 334-336.
Wang, H. et al., “Ultrafast recovery Time in a Strained InGaAs-AIAs p-i-n Modulator,”IEEE Photonics Technology Letters, vol. 7, No. 2, (Feb. 1995), pp. 173-175.
Castagna, M. E. et al., “Quantum Dot Materials and Devices for Light Emission in Silicon,” STMicroelectronics, 95121, Cantania, Italy, (2002), pp. 439-442.
http://hyperphysics.phy-astr.qsu.edu, “Stark Effect in Atomic Spectra,” (Apr. 16, 2003).

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