Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-07-11
2006-07-11
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C349S138000
Reexamination Certificate
active
07075109
ABSTRACT:
An electro-optical device for a liquid-crystal apparatus includes TFTs provided above a substrate, pixel electrodes that are provided above the TFTs and that are connected to corresponding relay electrodes via contact holes, a protection insulating film that is provided on the pixel electrodes from the gaps between the pixel electrodes to the edge portions thereof so as to cover end surfaces of the edge portions of the pixel electrodes, and an alignment layer that is provided on a surface including the protection insulating film and that is rubbed. Material residues of the alignment layer are reduced or prevented from being generated or trapped in the vicinities of the edges of the pixel electrodes and in the vicinities of the contact holes. Consequently, brightness irregularities or display irregularities are reduced.
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Oliff & Berridg,e PLC
Seiko Epson Corporation
Weiss Howard
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