Electro-optical device with undercut-reducing thin film...

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...

Reexamination Certificate

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Details

C257S059000, C257S066000, C438S149000, C438S151000, C438S166000

Reexamination Certificate

active

06838699

ABSTRACT:
The invention provides a thin-film semiconductor device, which reduces or prevents an undercut from being produced below a thin film when a pattern including an intersection is formed in the thin film. The invention also provides a method of manufacturing the same. A semiconductor film has a pattern including a bent shape or a projected shape. One line segment and another line segment, which define an intersection of the bent shape or the projected shape and which are consecutive, have an additional line segment interposed between ends of the one line segment and the other line segment form a smooth intersection in which each of the angles formed between the additional line segment and the one line segment and between the additional line segment and the other line segment is greater than 90° and less than 180°.

REFERENCES:
patent: 5491347 (1996-02-01), Allen et al.
patent: 5844255 (1998-12-01), Suzuki et al.
patent: 6642086 (2003-11-01), Lim et al.
patent: 1125899 (1996-07-01), None
patent: 0 698 923 (1996-02-01), None
patent: A-2-275638 (1990-11-01), None
patent: A-6-258667 (1994-09-01), None

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