Electro-optical device with inverted transparent substrate and m

Details Electro-optical device with inverted transparent substrate and m Electro-optical device with inverted transparent substrate and m

1991-02-27

1992-05-19

James, Andrew J.

357 16, 357 17, H01L 3112, H01L 3116, H01L 3300

Patent

active

051152860

ABSTRACT:
An electro-optical device with a transparent substrate is produced by epitaxially first growing the active device layers, followed by growth of the transparent substrate layer on an opaque wafer. The opaque wafer is subsequently removed. The active device layers have dopants with sufficiently low diffusivities that their electronic characteristics are not adversely affected by long exposure to elevated temperature during the growth of the transparent substrate layer. In a liquid phase epitaxy (LPE) method, a repeated temperature cycle technique is used where the temperature is repeatedly raised each time after cooling to provide a large cooling range for growing a sufficiently thick substrate layer or a series of device layers. In between growths and during the temperature heat-up periods, the device is stored within the LPE reactor. When a epitaxial layer is oxidizable, a non-oxidizable cap is temporarily grown on it in between growths and during the temperature heat up periods. The cap is subsequently removed by melting back at an elevated temperature just prior to the growth of a next layer. The technique may also be used for growing a transparent substrate which is lattice mismatched with the active deivce layers.

REFERENCES:
patent: 4570172 (1986-02-01), Henry et al.
patent: 4582952 (1986-04-01), McNeely et al.
patent: 4660207 (1987-04-01), Svilans
patent: 4700210 (1987-10-01), Burton et al.
patent: 4707716 (1987-11-01), Daniele
patent: 4719497 (1988-01-01), Tsai
patent: 4912532 (1990-03-01), Cook et al.
Patent Abstracts of Japan, vol. 12, No. 461 (E-689), Dec. 5, 1988; & JP-A-63 185 078 (NEC Corp.) Jul. 30, 1988, The whole document.
Electronic Letters, vol. 18, No. 25-26, Dec. 1982, pp. 1095-1097, London, GB; R. D. Burnham et al.: "Low-threshold single quantum well (60 A)".
"GaAlAs lasers grown by MO CVD with Mg as p-type dopant", p. 1095, paragraph 1.
Patent Abstracts of Japan, vol. 12, No. 232 (E-268), Jun. 30, 1988; & JP-A-63 23 376 (Mitsubishi Cable Ind. Ltd) Jan. 30, 1988, The whole document.
Journal of Electronic Engineering, vol. 20, No. 202, Oct. 1983, pp. 49-52, Tokyo, JP; T. Tejima et al.: "LED applications increase with brighter devices", FIG. 2; p. 50, right-hand column, paragraphs 4-5.
Patent Abstracts of Japan, vol. 5, No. 44 (E-50), Mar. 24, 1981; & JP-A-55 165 688 (Fujitsu K.K.) Dec. 24, 1980, The whole document.

Affiliated with

Also associated with

Rating

Electro-optical device with inverted transparent substrate and m does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electro-optical device with inverted transparent substrate and m, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electro-optical device with inverted transparent substrate and m will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2419079