Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2006-05-30
2006-05-30
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C349S039000
Reexamination Certificate
active
07053410
ABSTRACT:
An electro-optical device includes above a substrate: data lines extending in a first direction; scanning lines extending in a second direction in such a manner that the scanning lines and data lines cross each other; pixel electrodes and thin-film transistors each placed in corresponding regions corresponding to intersections of the scanning lines and data lines; storage capacitors disposed below the data lines and each electrically connected to the corresponding thin-film transistors and pixel electrodes; a capacitor line disposed above the data lines; first junction electrodes, formed using the same film used to form the data lines, each electrically connecting the corresponding pixel potential capacitor electrodes of the storage capacitors and pixel electrodes; and second junction electrodes, formed using the same film as that to form the data lines, each electrically connecting the corresponding constant potential capacitor electrodes of the storage capacitors and the capacitor line. The data lines, first junction electrodes, and second junction electrodes each including a nitride film.
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Kawata Hidenori
Kurashina Hisaki
Takahara Kenichi
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