Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2008-06-17
2008-06-17
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257SE27131, C349S043000
Reexamination Certificate
active
07388225
ABSTRACT:
Exemplary embodiments of the present invention include an electro-optical device including storage capacitors having excellent breakdown-voltage performance to function properly. Exemplary embodiments further include an electro-optical device including data lines, scanning lines, thin film transistors, and pixel electrodes formed on a substrate. The electro-optical device also includes storage capacitors composed of first electrodes electrically connected to the thin film transistors and the pixel electrodes, second electrodes that are arranged to face the first electrodes, and dielectric films arranged between the first electrodes and the second electrodes, and oxidation films obtained by oxidizing part or all of the surfaces of at least one of the first electrodes and the second electrodes.
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Fukuhara Keiji
Kawakami Yasushi
Oliff & Berridg,e PLC
Seiko Epson Corporation
Tran Minh-Loan T
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