Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2007-01-16
2008-11-11
Menz, Douglas M (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S436000
Reexamination Certificate
active
07449761
ABSTRACT:
An electro-optical device includes an anti-reflective layer arranged on the face of a first metal layer that is closer to a semiconductor layer than a second metal layer. The anti-reflective layer covers the channel region as viewed in plan view.
REFERENCES:
patent: 5757054 (1998-05-01), Miyawaki et al.
patent: 6610997 (2003-08-01), Murade
patent: 2003-140566 (2003-05-01), None
Advantage Law Group, LLC
Menz Douglas M
Seiko Epson Corporation
LandOfFree
Electro-optical device, method for manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electro-optical device, method for manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electro-optical device, method for manufacturing... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4048300