Electro-optical device, manufacturing method thereof, and...

Details Electro-optical device, manufacturing method thereof, and... Electro-optical device, manufacturing method thereof, and...

2008-04-01

2008-04-01

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S079000, C257S351000, C257SE27100, C438S128000

Reexamination Certificate

active

11384968

ABSTRACT:
The disclosure is directed to an electro-optical device and manufacturing method. In one example, a storage capacitor is disposed above a data line. The storage capacitor has a stacked structure of a fixed-potential electrode, a dielectric layer, and a pixel-potential electrode. The storage capacitor is disposed in an area including a region opposed to a channel region of a pixel-switching thin film transistor. A peripheral circuit is disposed in a peripheral area located around a pixel array area. The peripheral circuit includes a peripheral-circuit thin film transistor. The dielectric layer includes a peripheral dielectric layer area having a region opposed to the channel region of the peripheral-circuit thin film transistor.

REFERENCES:
patent: 2004/0109128 (2004-06-01), Hirabayashi
patent: 06-003703 (1994-01-01), None
patent: 07-049508 (1995-02-01), None
patent: 2002-156652 (2002-05-01), None

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