Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1995-07-05
1997-07-01
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257344, 257350, 257347, 257 72, 257365, 257750, 257758, H01L 3100, H01L 29786
Patent
active
056441479
ABSTRACT:
A thin film transistor (TFT) has first (lower) and second (upper) gate electrodes which are provided respectively above and under a semiconductor active layer and first and second insulating films (which serve as gate insulating films) provided respectively between the first gate electrode and a semiconductor layer and between a second gate electrode and the semiconductor layer. The second gate electrode has an anodic oxide film made of a material constituting the gate electrode on the upper and side surfaces thereof formed by anodization. Also, a silicide region is provided by covering the source/drain regions of the TFT with a silicide and changing a part of the region into a silicide.
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4:3: High-Aperture And Fault-Tolerant Pixel Structure For TFT-LCDs, S.S. Kim, S.H. Moon, D.G. Kim, N.D. Kim, Samsung Electronics, Kyungki-do, Korea, SID 95 Digest, pp. 15-18.
Takemura Yasuhiko
Yamazaki Shunpei
Crane Sara W.
Ferguson Jr. Gerald J.
Hardy David B.
Semiconductor Energy Laboratory Co,. Ltd.
Smith Evan R.
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