Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2008-04-01
2008-04-01
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S351000, C257S408000, C257SE29012, C257SE29278
Reexamination Certificate
active
10918551
ABSTRACT:
An electro-optical device, such as a camera, includes a display unit having a thin film transistor including a source region, a drain region, a channel region formed between the source and drain regions, and a LDD region formed between the channel region and at least one of the source and drain regions. The LDD region may include first and second regions having different impurity concentrations. An impurity concentration may change continuously in the LDD region.
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Fish & Richardson P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Tran Minh-Loan T
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