Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2007-05-22
2007-05-22
Wilczewski, M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C438S030000, C438S027000, C438S065000, C438S029000, C257S100000, C349S151000, C349S147000, C349S157000
Reexamination Certificate
active
10816227
ABSTRACT:
An electro-optical device is provided that includes a protection layer formed on a first substrate leaving a region of the first substrate region exposed; a first electrode formed on the protection layer; a first inter-substrate conduction unit formed on the protection layer and electrically connected to the first electrode; a second substrate opposing the first substrate and having a second electrode formed thereon; a second inter-substrate conduction unit formed on the second substrate and electrically connected to the second electrode; and a conductive member interposed between the first inter-substrate conduction unit and the second inter-substrate conduction unit to electrically connect both units together. The electro-optical device further includes a sealant that contains the conductive member bonding the first substrate and the second substrate together by extending over the protection layer and the exposed region where the protection layer is not formed.
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Imazeki Yoshikatsu
Sakai Kazuyoshi
Chiu Tsz Kit
Seiko Epson Corporation
Wilczewski M.
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