Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor...
Patent
1994-09-29
1996-03-19
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
257 56, 257 59, 257 72, 257102, 359 54, 359 59, 359 57, 359 85, H01L 2904, H01L 31036, H01L 210376
Patent
active
055005381
ABSTRACT:
An electro-optical device is disclosed. The electro-optical device comprises pixels arranged in rows and columns. Each pixel comprises at least one complementary TFT (thin film transistor) pair. Each complementary TFT pair consists of an n-channel TFT and a p-channel TFT. The gates of the complementary TFTs of each pixel are all connected to a signal line extending in the Y-direction. The input terminals of the TFTs of each pixel are connected to a pair of signal lines extending in the X-direction. Each pixel has at least one pixel electrode connected to the outputs of the TFTs thereof. In the operation of the electro-optical device, an electric signal is applied to the pair of signal lines extending in the X-direction and an electric signal is applied to the signal line extending in the Y-direction for the duration of the electric signal applied to the pair of signal lines extending in the X-direction.
REFERENCES:
patent: 4818077 (1989-04-01), Ohwada et al.
patent: 5082351 (1992-01-01), Fergason
patent: 5132820 (1992-07-01), Someya et al.
patent: 5383041 (1995-01-01), Yamazaki et al.
Mase Akira
Yamazaki Shunpei
Ferguson Jr. Gerald J.
Mintel William
Semiconductor Energy Laboratory Co,. Ltd.
Smith Evan R.
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