Electro-optical device and method for manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257 59, 257 67, 257351, H01L 2713, H01L 29786

Patent

active

060230754

ABSTRACT:
An electro-optical device and a method for manufacturing the same are disclosed. The device comprises a pair of substrates and an electro-optical modulating layer (e.g. a liquid crystal layer having sandwiched therebetween, said pair of substrates consisting of a first substrate having provided thereon a plurality of gate wires, a plurality of source (drain) wires, and a pixel matrix comprising thin film transistors, and a second substrate facing the first substrate, wherein, among the peripheral circuits having established on the first substrate and being connected to the matrix wirings for the X direction and the Y direction, only a part of said peripheral circuits is constructed from thin film semiconductor devices fabricated by the same process utilized for an active device, and the rest of the peripheral circuits is constructed from semiconductor chips. The liquid crystal display device according to the present invention is characterized by that the peripheral circuits are not wholly fabricated into thin film transistors, but only those portions having a simple device structure, or those composed of a small number of devices, or those comprising an IC not easily available commercially, or those comprising an expensive integrated circuit, are fabricated by thin film transistors. According to the present invention, an electro-optical device is provided at an increased production yield with a reduced production cost.

REFERENCES:
patent: 4068020 (1978-01-01), Reuschel
patent: 4103297 (1978-07-01), McGreivy et al.
patent: 4239346 (1980-12-01), Lloyd
patent: 4363828 (1982-12-01), Brodsky et al.
patent: 4365013 (1982-12-01), Ishioka et al.
patent: 4378417 (1983-03-01), Maruyama et al.
patent: 4395726 (1983-07-01), Maeguchi
patent: 4460670 (1984-07-01), Ogawa et al.
patent: 4470060 (1984-09-01), Yamazaki
patent: 4500388 (1985-02-01), Ohmura et al.
patent: 4565584 (1986-01-01), Tamura et al.
patent: 4581476 (1986-04-01), Yamazaki
patent: 4581620 (1986-04-01), Yamazaki
patent: 4584025 (1986-04-01), Takaoka et al.
patent: 4591892 (1986-05-01), Yamazaki
patent: 4597160 (1986-07-01), Ipri
patent: 4621276 (1986-11-01), Malhi
patent: 4659392 (1987-04-01), Vasudev
patent: 4680580 (1987-07-01), Kawahara
patent: 4690717 (1987-09-01), Yamazaki
patent: 4693759 (1987-09-01), Noguchi et al.
patent: 4729009 (1988-03-01), Ang
patent: 4740829 (1988-04-01), Nakagiri et al.
patent: 4743567 (1988-05-01), Pandya et al.
patent: 4755865 (1988-07-01), Wilson et al.
patent: 4760008 (1988-07-01), Yamazaki et al.
patent: 4766477 (1988-08-01), Nakagawa et al.
patent: 4772927 (1988-09-01), Saito et al.
patent: 4795679 (1989-01-01), Ramesh et al.
patent: 4814842 (1989-03-01), Nakagawa et al.
patent: 4818077 (1989-04-01), Ohwada et al.
patent: 4838654 (1989-06-01), Hamaguchi et al.
patent: 4849797 (1989-07-01), Ukai et al.
patent: 4860069 (1989-08-01), Yamazaki
patent: 4862237 (1989-08-01), Morozumi
patent: 4864376 (1989-09-01), Aoki et al.
patent: 4885052 (1989-12-01), Fan et al.
patent: 4888305 (1989-12-01), Yamazaki et al.
patent: 4891330 (1990-01-01), Guha et al.
patent: 4897360 (1990-01-01), Guckel et al.
patent: 4905073 (1990-02-01), Chem
patent: 4938565 (1990-07-01), Ichikawa
patent: 4949141 (1990-08-01), Busta
patent: 4959700 (1990-09-01), Yamazaki
patent: 4969025 (1990-11-01), Yamamoto
patent: 4969031 (1990-11-01), Kobayashi et al.
patent: 4986213 (1991-01-01), Yamazaki et al.
patent: 5003356 (1991-03-01), Wakai et al.
patent: 5012228 (1991-04-01), Masuda et al.
patent: 5037766 (1991-08-01), Wang
patent: 5043772 (1991-08-01), Yamazaki
patent: 5051570 (1991-09-01), Tsujikawa et al.
patent: 5055899 (1991-10-01), Wakai et al.
patent: 5056895 (1991-10-01), Kahn
patent: 5057889 (1991-10-01), Yamada et al.
patent: 5065208 (1991-11-01), Shah
patent: 5077223 (1991-12-01), Yamazaki
patent: 5082351 (1992-01-01), Fergason
patent: 5084905 (1992-01-01), Sasaki et al.
patent: 5132754 (1992-07-01), Serikawa et al.
patent: 5132820 (1992-07-01), Someya et al.
patent: 5132821 (1992-07-01), Nicholas
patent: 5151689 (1992-09-01), Kabuto et al.
patent: 5236544 (1993-08-01), Yamagata
patent: 5247191 (1993-09-01), Yamazaki et al.
patent: 5250818 (1993-10-01), Saraswat et al.
patent: 5250931 (1993-10-01), Misawa et al.
patent: 5261156 (1993-11-01), Mase et al.
patent: 5270224 (1993-12-01), Furumura et al.
patent: 5270567 (1993-12-01), Mori et al.
patent: 5281840 (1994-01-01), Sarma
patent: 5289300 (1994-02-01), Yamazaki et al.
patent: 5315132 (1994-05-01), Yamazaki
patent: 5327001 (1994-07-01), Wakai et al.
patent: 5349204 (1994-09-01), Yamazaki
patent: 5349226 (1994-09-01), Kawaguchi et al.
patent: 5372958 (1994-12-01), Miyasaka et al.
patent: 5383041 (1995-01-01), Yamazaki et al.
patent: 5402041 (1995-03-01), Kishino et al.
patent: 5404175 (1995-04-01), Nagae et al.
patent: 5418636 (1995-05-01), Kawasaki
patent: 5424752 (1995-06-01), Yamazaki et al.
patent: 5426526 (1995-06-01), Yamamoto et al.
patent: 5453858 (1995-09-01), Yamazaki
patent: 5500538 (1996-03-01), Yamazaki et al.
patent: 5514879 (1996-05-01), Yamazaki
patent: 5530266 (1996-06-01), Yonehara et al.
patent: 5539550 (1996-07-01), Spitzer et al.
patent: 5612799 (1997-03-01), Yamazaki et al.
patent: 5614732 (1997-03-01), Yamazaki
patent: 5744818 (1998-04-01), Yamazaki et al.
VLSI Technology, Edited by S.M. Sze, McGraw-Hill Book Company, "Chapter 6 Dielectric and Polysilicon Film Deposition" A.C. Adams, pp. 233-235.
Scheid, et al., "Super Large Grain Polycrystalline Silicon Obtained From Pyrolysis of Si.sub.2 H.sub.6 and Annealing" Jap. J. Appl. Phys. vol. 29, No. 11, Nov. 1990, pp. L 2105-2107.
Blum et al. "Low Pressure CVD Process for Micro and Polycrystalline Silicon" IBM Technical Disclosure Bulletin vol. 26, No. 3A, Aug. 1983, pp. 921-922.
Madsen et al. "In Situ Doping of Silicon Films Prepared by Low Pressure Chemical Vapor Deposition Using Disilane and Phosphine" J. Electrochem. Soc., col. 137, No. 7, Jul. 1990, pp. 2246-2251.
Wolf et al., Silicon Processing for the VLSI Era, vol. 1: Process Technology, Lattice Press, Sunset Beach, CA (1986), pp. 175-176.
H. Ohshima et al., "Future Trends for TFT Integrated Circuits on Glass Substrates, " IEDM (IEEE 1989), pp. 157-160.
Journal of Non-Crystalline Solids, vols. 59, 60, Dec. 1983, Part II, pp. 731-734, Proceedings of the Xth International Conference on Amorphous and Liquid Semiconductors, Tokyo, Jap., Aug. 22-26, 1983, C.C. Tsai et al.
Solar Cells 2, (1980), Investigation of the Hydrogen and Impurity Contents of Amorphous Silicon by Secondary Ion Mass Spectrometry, Charles MaGee and David E. Carlson, RCA Laaboratories, Princeon, N.J., pp. 365-376.
The Physics of Hydrogenerated Amorphous Silicon I Structure, Preparation, and Devices, Edited by J.D. Joannopoulos and G. Lucovsky, Springer-Verlag, Berlin Heidelberg, New York, Tokyo 1984, pp. 8-9 & 34-41.
Hatalis et al., "High-Performance Thin Film Transistors in Low-Temperature Crystallized LPCVD Amorphous Silicon Films, " IEEE Electron Device Letters, vol. EDL-8, No. 8, Aug. 1987, pp. 161-164.
"(Invited) Amorphous Silicon Transistors and Integrated Circuits" Masakiyo Matsumura, Japanese Journal of Applied Physics, vol. 22, (1983) Supplement 22-1, pp. 487-491.
"Color Liquid Crystal Display", Shunsuke Kobayashi, Dec. 14, 1990, pp. 162-166.
"An Active Matrix LCD With Integrated Driver Circuits Using a Si TFTs" M. Aklyama et al., Japan Display , pp. 212-215.
An Active Matrix LCD With Integrated Driver Circuits Using a SI TFTs, Akiyama et al., Japan Display, pp. 212-215.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Electro-optical device and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electro-optical device and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electro-optical device and method for manufacturing the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1683003

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.