Fishing – trapping – and vermin destroying
Patent
1994-04-22
1998-12-15
Kunemund, Robert
Fishing, trapping, and vermin destroying
437173, 142DIG1, H01L 2120
Patent
active
058496017
ABSTRACT:
An electro-optical device and a method for manufacturing the same are disclosed. The device comprises a pair of substrates and an electro-optical modulating layer (e.g. a liquid crystal layer having sandwiched therebetween, said pair of substrates consisting of a first substrate having provided thereon a plurality of gate wires, a plurality of source (drain) wires, and a pixel matrix comprising thin film transistors, and a second substrate facing the first substrate, wherein, among the peripheral circuits having established on the first substrate and being connected to the matrix wirings for the X direction and the Y direction, only a part of said peripheral circuits is constructed from thin film semiconductor devices fabricated by the same process utilized for an active device, and the rest of the peripheral circuits is constructed from semiconductor chips. The liquid crystal display device according to the present invention is characterized by that the peripheral circuits are not wholly fabricated into thin film transistors, but only those portions having a simple device structure, or those composed of a small number of devices, or those comprising an IC not easily available commercially, or those comprising an expensive integrated circuit, are fabricated by thin film transistors. According to the present invention, an electro-optical device is provided at an increased production yield with a reduced production cost.
REFERENCES:
patent: 4363828 (1982-12-01), Brodsky et al.
patent: 4438654 (1984-03-01), Hamaguchi et al.
patent: 4460670 (1984-07-01), Ogawa et al.
patent: 4470060 (1984-09-01), Yamazaki
patent: 4500388 (1985-02-01), Ohmura et al.
patent: 4565584 (1986-01-01), Tamura et al.
patent: 4581476 (1986-04-01), Yamazaki
patent: 4584025 (1986-04-01), Takaoka et al.
patent: 4591892 (1986-05-01), Yamazaki
patent: 4693759 (1987-09-01), Noguchi et al.
patent: 4729009 (1988-03-01), Ang
patent: 4743567 (1988-05-01), Pandya et al.
patent: 4760008 (1988-07-01), Yamazaki et al.
patent: 4766477 (1988-08-01), Nakagawa et al.
patent: 4795679 (1989-01-01), Ramesh et al.
patent: 4814842 (1989-03-01), Nakagawa et al.
patent: 4885052 (1989-12-01), Fan et al.
patent: 4959700 (1990-09-01), Yamazaki
patent: 5043772 (1991-08-01), Yamazaki
patent: 5151689 (1992-09-01), Kabuto et al.
patent: 5236544 (1993-08-01), Yamagata
patent: 5270224 (1993-12-01), Furumura et al.
patent: 5289300 (1994-02-01), Yanazaki et al.
patent: 5315132 (1994-05-01), Yamazaki
patent: 5349204 (1994-09-01), Yamazaki
patent: 5372958 (1994-12-01), Miyasaka et al.
VLSI Technology, Edited by S.M. Sze, McGraw-Hill Book Company, "Chapter 6 Dielectric and Polysilicon Film Deposition" A.C. Adams, pp. 233-235.
Journal of Non-Crystalline Solids, vols. 59 & 60, Dec. 1983, Part II, pp. 731-734, Proceedings of the Xth International Conference on Amorphous and Liquid Semiconductors, Tokyo, Japan, Aug. 22-26, 1983, C.C. Tsai et al.
Solar Cells 2, (1980), Investigation of the Hydrogen and Impurity Contents of Amorphous Silicon by Secondary Ion Mass Spectrometry, Charles MaGee and David E. Carlson, RCA Laboratories, Princeon, N.J., pp. 365-376.
The Physics of Hydrogenerated Amorphous Silicon I Structure, Preparation, and Devices, Edited by J.D. Joannopoulos and G. Lucovsky, Springer-Verlag, Berlin Heidelberg, New York, Tokyo 1984, pp. 8-9 & 38-41.
Wolf et al., Silicon Processing for the VLSI Era, vol. 1: Process Technology, Lattice Press, Sunset Beach, CA (1986), pp. 175-176.
H. Ohshima et al., "Future Trends for TFT Integrated Circuits on Glass Substrates," IEDM (IEEE 1989), p. 157160.
Hatalis et al., "High-Performance ThinOFilm Transistors in Low-Temperature Crystallized LPCVD Amorphous Silcion Films," IEEE Electron Device Letters, vol. EDL-8, No. 8, Aug. 1987, pp. 161-164.
Scheid, et al. "Super Large Grain Polycrystalline Silicon Obtained from Pyrolysis of Si.sub.2 H.sub.6 and Annealing" Jap. J. Appl. Phys. vol. 29, No. 11, Nov. 1990, pp. L 2105-L 2107.
Blum et al. "Low Pressure CVD Process for Micro and Polycrystalline Silicon" IBM Technical Disclosure Bulletin vol. 26, No. 3A, Aug. 1983, pp. 921-922.
Madsen et al. "In Situ Doping of Silicon Films Prepared by Low Pressure Chemical Vapor Deposition Using Disilane and Phosphine" J. Electrochem. Soc., col. 137, No. 7, Jul. 1990, pp. 2246-2251.
Ferguson Jr. Gerald J.
Kunemund Robert
Robinson Eric J.
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Electro-optical device and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electro-optical device and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electro-optical device and method for manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1457192