Electro-optical device and manufacturing method thereof

Details Electro-optical device and manufacturing method thereof Electro-optical device and manufacturing method thereof

2006-05-23

2008-12-09

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

C438S149000

Reexamination Certificate

active

07462866

ABSTRACT:
An electro-optical device having high operation performance and reliability, and a manufacturing method thereof A TFT structure which is strong agains hot carrier injection is realized by disposing a Lov region207in an n-channel TFT203which forms a driver circuit. Further, Loff regions217to220and offset region are disposed in an n-channel TFT304which forms a pixel section, and a TFT structure of low OFF current value is realized. Further, by reducing the n-type impurity element contained in Loff regions217to220to approximately 1×1016to 5×1018atoms/cm3, further reduction of OFF current can be performed.

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