Electro-optical device and manufacturing method thereof

Details Electro-optical device and manufacturing method thereof Electro-optical device and manufacturing method thereof

2007-02-06

2007-02-06

Tran, Minh-Loan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S072000, C257S347000, C257SE29137, C257SE29126

Reexamination Certificate

active

11253275

ABSTRACT:
A semiconductor device that uses a high reliability TFT structure is provided. The gate electrode of an n-channel type TFT is formed by a first gate electrode and a second gate electrode that covers the first gate electrode. LDD regions have portions that overlap the second gate electrode through a gate insulating film, and portions that do not overlap. As a result, the TFT can be prevented from degradation in an ON state, and it is possible to reduce the leak current in an OFF state.

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