Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-01-18
2008-11-18
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S351000, C257S408000, C257SE29137, C257SE29269
Reexamination Certificate
active
07453088
ABSTRACT:
A semiconductor device that uses a high reliability TFT structure is provided. The gate electrode of an n-channel type TFT is formed by a first gate electrode and a second gate electrode that covers the first gate electrode. LDD regions have portions that overlap the second gate electrode through a gate insulating film, and portions that do not overlap. As a result, the TFT can be prevented from degradation in an ON state, and it is possible to reduce the leak current in an OFF state.
REFERENCES:
patent: 5015599 (1991-05-01), Verhaar
patent: 5247190 (1993-09-01), Friend et al.
patent: 5323042 (1994-06-01), Matsumoto
patent: 5399502 (1995-03-01), Friend et al.
patent: 5594569 (1997-01-01), Konuma et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5712495 (1998-01-01), Suzawa
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 6259120 (2001-07-01), Zhang et al.
patent: 6331476 (2001-12-01), Kawakita et al.
patent: 6380007 (2002-04-01), Koyama
patent: 6420758 (2002-07-01), Nakajima
patent: 6448612 (2002-09-01), Miyazaki et al.
patent: 6512271 (2003-01-01), Yamazaki et al.
patent: 6518594 (2003-02-01), Nakajima et al.
patent: 6617644 (2003-09-01), Yamazaki et al.
patent: 6791112 (2004-09-01), Yamazaki et al.
patent: 7064020 (2006-06-01), Yamazaki
patent: 2007/0210312 (2007-09-01), Nakajima et al.
patent: 07-130652 (1995-05-01), None
patent: 08-078329 (1996-03-01), None
patent: 10-092576 (1998-04-01), None
patent: 10-135468 (1998-05-01), None
patent: 10-135469 (1998-05-01), None
patent: WO 90/13148 (1990-11-01), None
Schenk, H. et al, “Polymers for Light Emitting Diodes,” EURODISPLAY '99, Proceedings of the 19thInternational Display Research Conference, Berlin, Germany, Sep. 6-9, 1999, pp. 33-37.
Hatano, M. et al, “A Novel Self-Aligned Gate-Overlapped LDD Poly-Si TFT wiht High Reliabilty and Perforamce,” IDEM 97, International Electron Devices Meeting, Washington, D.C., Dec. 7-10, 1997, pp. 523-526.
Inui, S. et al, “Thresholdless Antiferroelectricity in Liquid Crystals and its Application to Displays,” J. Mater. Chem., vol. 6, No. 4, 1996, pp. 671-673.
Yoshida, T. et al, “A Full-Color Thresholdless Antiferroelectric LCD Exhibiting Wide Viewing Angle with Fast Response Time,” SID 97 Digest, May 13, 1997, pp. 841-844.
Furue, H. et al, “Characteristics and Driving Scheme of Polymer-Stabilized Monostable FLCD Exhibiting Fast Response Time and High Contrast Ratio with Gray-Scale Capability,” SID 98 Digest, 1998, pp. 782-785.
Terada, et al, “Half-V Switching Mode FLCD,” Proceedings of the 46th Applied Physics Association Lectures, 28P-V-8, Mar. 1999, p. 1316.
Yoshihara, T. et al, “Time Division Full Color LCD by Ferroelectric Liquid Crystal,” EKISHO, vol. 3, No. 3, Jul. 25, 1999, pp. 190-194.
Nakajima Setsuo
Ohtani Hisashi
Yamazaki Shunpei
Cook Alex Ltd.
Semiconductor Energy Laboratory Co,. Ltd.
Tran Minh-Loan T
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