Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-03-29
2005-03-29
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S294000, C257S749000, C438S048000, C438S070000, C438S128000, C438S149000, C438S151000, C438S157000, C438S283000
Reexamination Certificate
active
06872975
ABSTRACT:
An active matrix driven electro-optical device, such as a liquid crystal device, enabled to add sufficient storage capacitance to pixel electrodes and decrease the diameter of contact holes connecting with pixel electrodes even when a fine pixel pitch is employed. The liquid crystal device has TFTs, data lines, scanning lines, storage capacitor lines, and pixel electrodes provided on a TFT array substrate. Each of the pixel electrodes is electrically connected to one of the TFTs by two contact holes through a barrier layer. A part of a semiconductor layer and each of the capacitor lines sandwich a first dielectric film and constitute a first storage capacitor, while a part of the barrier layer and each of the capacitor lines sandwich a second dielectric film and constitute a second storage capacitor.
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Copending U.S. Appl. No. 10/320,373, filed Dec. 17, 2000, Murade.
Huynh Andy
Nelms David
Seiko Epson Corporation
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