Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-01-04
2005-01-04
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S098000
Reexamination Certificate
active
06838697
ABSTRACT:
A substrate is overlaid with each pixel electrode and a TFT connected thereto, each scanning line and each data line which are connected to the TFT, each pixel potential side capacitance electrode which is connected to the pixel electrode and which constitutes a storage capacitor, each fixed potential side capacitance electrode which is arranged in opposition to the pixel potential side capacitance electrode via a dielectric film and which constitutes the storage capacitor, and a contact hole which electrically connects the fixed potential side capacitance electrode and a lower light shield film disposed under the TFT so as to shield the TFT from the entrance of light. Thus, in an electro-optical device having the TFT, crosstalk, burn-in ascribable to the narrowing of the storage capacitor are prevented or substantially prevented from occurring, and also a light leakage current in the TFT is prevented or substantially prevented from being generated.
REFERENCES:
patent: 6489631 (2002-12-01), Young et al.
patent: 6583830 (2003-06-01), Yasukawa et al.
patent: 6661025 (2003-12-01), Hirabayashi
Oliff & Berridg,e PLC
Seiko Epson Corporation
Wilson Allan R.
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