Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2008-04-15
2008-04-15
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257SE27132, C257S072000, C257S659000, C257S660000, C257SE27133
Reexamination Certificate
active
07358532
ABSTRACT:
An electro-optical device includes first switching elements which are correspondingly provided at intersections of a plurality of scanning lines and a plurality of data lines in a display region, at least three metal layers which are provided in the display region, a wiring line portion which is provided in an adjacent region of the display region and supplies signals to second switching elements through signal lines formed of at least two metal layers of the three metal layers, and an electromagnetic shield which is provided in the adjacent region of the display region. The electromagnetic shield has a first shield portion which covers the wiring line portion using metal layers other than the metal layers forming the signal lines, and a second shield portion which is electrically connected to the first shield portion and is disposed between the signal lines.
REFERENCES:
patent: 5811846 (1998-09-01), Miura et al.
patent: A-2005-77484 (2005-03-01), None
AdvantEdge Law Group, LLC
Ho Tu-Tu
Seiko Epson Corporation
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