Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2007-08-23
2010-06-01
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S059000, C257S072000, C257S098000
Reexamination Certificate
active
07728400
ABSTRACT:
An electro-optical device includes semiconductor layers disposed between a first substrate and an electro-optical layer. The semiconductor layers are provided at positions corresponding to crossover regions of scanning lines and data lines. Island light shielding films are disposed between the second substrate and the electro-optical layer. The island light shielding films are isolated from each other and at least partially overlapping a corresponding one of the semiconductor layers in plan view.
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Louie Wai-Sing
Oliff & Berridg,e PLC
Seiko Epson Corporation
Tang Sue
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