Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-11-13
2007-11-13
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S079000, C257S099000, C257S082000, C257S088000, C257S005000, C257S013000, C257S068000, C257S081000
Reexamination Certificate
active
10961221
ABSTRACT:
To provide an electro-optical device comprising a thin film having a uniform thickness, which is formed by drying liquid droplets filled in a liquid droplet ejection region surrounded by a partition. An electro-optical device comprises partitions22for separating a plurality of regions formed on a substrate10. Each of the partitions22has a lyophilic first partition43and a liquid-repellent second partition44which is formed on an upper surface portion of the first partition except for a circumferential portion surrounding the region of the first partition43. The device also comprises a functional layer45which is formed on the region surrounded by the partition and includes at least a light emitting layer. The device further comprises a pair of electrodes41and46with the functional layer interposed therebetween, in which the first partition43has the thickness larger than the thickness of the functional layer45, and a side inclined angle of the first partition43is less than the side inclined angle of the second partition44.
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Ito Tomoyuki
Nozawa Ryoichi
Jackson Jerome
Nguyen Joseph
Oliff & Berridg,e PLC
Seiko Epson Corporation
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