Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-03-27
2007-03-27
Tran, Minh-Loan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257SE27131, C349S111000
Reexamination Certificate
active
10917504
ABSTRACT:
Aspects of the invention can provide an electro-optical device that displays an image in good quality by an electro-optical device, such as a liquid crystal device, even in the proximity of edges of the image displayed. The electro-optical device can include a plurality of pixel electrodes, and wires and electronic elements that are used to drive the pixel electrodes, provided on a substrate. The plurality of pixel electrodes can be arranged in an image display area and a dummy area. The pixel electrodes disposed in the dummy area function as dummy pixel electrodes. Furthermore, on the substrate, dummy-pixel light-shielding films that cover at least part of opening regions of the dummy pixel electrodes are provided.
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Oliff & Berridg,e PLC
Seiko Epson Corporation
Tran Minh-Loan
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