Electro-optical device and electronic apparatus

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material

Reexamination Certificate

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Details

C257S057000, C257S347000, C438S149000, C438S479000, C438S517000

Reexamination Certificate

active

06864505

ABSTRACT:
The invention provides an electro-optical device that can include a pixel electrode, a thin-film transistor (TFT) including a semiconductor layer connected to the pixel electrode, and a data line and scanning line connected to the TFT. The scanning line can include a narrow part as a gate electrode facing a channel region in the semiconductor layer, and a wide part not facing the channel region.Such construction permits the electro-optical device to display high quality images by preventing light from impinging the TFT.

REFERENCES:
patent: 5339181 (1994-08-01), Kim et al.
patent: 5367179 (1994-11-01), Mori et al.
patent: 5515187 (1996-05-01), Nakamura et al.
patent: 5844255 (1998-12-01), Suzuki et al.
patent: 6226059 (2001-05-01), Yamamoto et al.
patent: 6521913 (2003-02-01), Murade

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