Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-03-08
2005-03-08
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S057000, C257S347000, C438S149000, C438S479000, C438S517000
Reexamination Certificate
active
06864505
ABSTRACT:
The invention provides an electro-optical device that can include a pixel electrode, a thin-film transistor (TFT) including a semiconductor layer connected to the pixel electrode, and a data line and scanning line connected to the TFT. The scanning line can include a narrow part as a gate electrode facing a channel region in the semiconductor layer, and a wide part not facing the channel region.Such construction permits the electro-optical device to display high quality images by preventing light from impinging the TFT.
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Oliff & Berridg,e PLC
Ortiz Edgardo
Seiko Epson Corporation
Wilson Allan R.
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