Electro-optic semiconductor modulators

Details Electro-optic semiconductor modulators Electro-optic semiconductor modulators

2006-08-29

2006-08-29

Spector, David N. (Department: 2873)

Optical: systems and elements

Optical modulator

Having particular chemical composition or structure

C359S248000, C359S321000

Reexamination Certificate

active

07099069

ABSTRACT:
An electro-optic (EO) device having a high-resistivity semiconducting crystal and a method of operating such a device. The local shielding of the externally applied field lowers the EO effect, which can be partially or completely inhibited particularly in the low-frequency regime, i.e., less than about 105Hz. By holding a high-resistivity semiconducting crystal at a suitable temperature, EO response and efficiency are improved, in particular for light signals that are non-modulated or modulated at low frequencies. Preferably, the temperature at which the semiconducting crystal is held during functioning is between 50 and 150° C. Enhancement of the EO effect has been demonstrated also for EO devices operating at relatively large optical powers, i.e., larger than about 0.1 mW.

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