1988-03-24
1991-09-10
James, Andrew J.
357 4, 357 16, 350355, H01L 2714, H01L 3100
Patent
active
050478222
ABSTRACT:
A quantum well semiconductor device that is responsive to optical energy and operates by resonant field ionization of quantum confined excitons and comprises a semiconductor device including a multi-layered semiconductor structure fabricated on the substrate and including at least two quantum well layers of mutually different widths separated from each other by a semiconductor barrier layer. Because of the different widths, the two quantum well layers have distinct and different electron and hole sub-band energies which when an external electric field is applied across the semiconductor structure, it is possible to bring the electron sub-bands of the wells into resonance, whereupon electrons tunnel back and forth through the barrier layer thereby altering the light absorption coefficient near the excitonic absorption feature. This mechanism provides a means to phase shift or modulate the light traversing through the device.
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Leavitt Richard P.
Little, Jr. John W.
Chin Gay
Crane Sara W.
Eisel James B.
James Andrew J.
Martin Marietta Corporation
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