Patent
1986-10-14
1988-12-27
Lee, John D.
G02B 1015
Patent
active
047936770
ABSTRACT:
An opto-electronic device, comprising an optical waveguide and means for imposing an electrical field in a direction transverse to the waveguide, is designed such that the spatial spread of the electrical field is very small. The electrical field overlies the region of peak amplitude of the profile of optical radiation in the waveguide. Constructed principally out of semiconductor materials made from elements selected from the III and V groups of the Periodic Table, the device lends itself to monolithic integration in optical communications systems.
REFERENCES:
patent: 3748597 (1973-07-01), Reinhart
patent: 3994566 (1976-11-01), Lotspeich et al.
patent: 4196964 (1980-04-01), Paprichon
"Fabrication of Modulators and Switches in GaAs-Based Semiconductor Materials", A. J. N. Houghton & R. M. Rodgers, British Telecom Research Labs. Martlesham Heath, Ipswich, IP5 7RE UK, pp. 65-68.
2nd European Conference on Integrated Optics, Venice, Oct. 17th-18th 1983, pp. 65-67, A. J. N. Houghton, et al.: "Fabrication of Modulators and Switches in GaAs-Based Semiconductor Materials".
Adams Michael J.
Ritchie Simon
Robertson Michael J.
Rodgers Paul M.
British Telecommunications public limited company
Heartney Phan
Lee John D.
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