Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1994-03-28
1996-11-05
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 59, 257350, 359 59, H01L 29786
Patent
active
055720471
ABSTRACT:
A novel structure of an active electro-optic device is disclosed. The device is provided with complementary transistors therein which comprise a p-channel TFT and an n-channel TFT. In case of a liquid crystal electro-optic device, the device comprises a pair of substrates, a liquid crystal provided therebetween, picture element electrode islands arranged in matrix form and provided on one of the substrates, complementary transistors provided thereon, and signal lines provided thereon. Gate electrodes of p-channel and n-channel transistors of these complementary transistors are connected to some of the signal lines while source (or drain) electrodes thereof are connected to the electrode islands and drain (or source) electrodes thereof are connected to other signal lines.
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Hiroki Masaaki
Mase Akira
Ferguson Jr. Gerald J.
Jackson Jerome
Robinson Eric J.
Semiconductor Energy Laboratory Co,. Ltd.
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