Electro-optic device

Details Electro-optic device Electro-optic device

1998-05-22

1999-06-01

Bowers, Charles

Semiconductor device manufacturing: process

Making conductivity modulation device

438507, 438548, 385 2, 385 3, 385 9, 385 16, H01L 2104

Patent

active

059083050

ABSTRACT:
The device comprises a layer of silicon separated from a substrate by a layer of insulating material. A rib having an upper surface and two side surfaces is formed in the layer of silicon to provide a waveguide for the transmission of optical signals. A lateral doped junction is formed between the side surfaces of the rib such that an electrical signal can be applied across the junction to control the density of charge carriers across a substantial part of the cross-sectional area of the rib thereby actively altering the effective refractive index of the waveguide.

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Giguere. Stephen R., et al., "Simulation Studies of Silicon Electro-Optic Waveguide Devices", Journal of Applied Physics, vol. 68, No. 10, Nov. 5, 1990. pp. 4964-4970.
Friedman, Lionel, et al., "Silicon Double-Injection Electro-Optic Modulator with Junction Gate Control", Journal of Applied Physics, vol. 63, No. 6, Mar. 1988. pp. 1831-1839.
Schmidtchen, J., et al., "Low Loss Singlemode Optical Waveguides with Large Cross-Section in Silicon-On-insulator", Electronics Letters, vol. 27, No. 16, Aug. 1991. pp. 1486-1488.

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