Electro-luminescent material, solid state electro-luminescent de

Details Electro-luminescent material, solid state electro-luminescent de Electro-luminescent material, solid state electro-luminescent de

1994-09-30

1996-12-03

Ryan, Patrick

Stock material or miscellaneous articles

Composite

Of silicon containing

428688, 428689, 428690, 428699, 428702, 428704, 428917, 2523014R, 427527, 427529, B32B 904, C09K 1159

Patent

active

055806635

ABSTRACT:
An electro-luminescent material and solid state electro-luminescent device comprising a mixed material layer formed of a mixture of silicon and silicon oxide doped with rare earth ions so as to show intense room-temperature photo- and electro-luminescence is described. The luminescence is due to internal transitions of the rare earth ions. The mixed material layer has an oxygen content ranging from 1 to 65 atomic % and is produced by vapor deposition and rare earth ions implant. A separated implant with elements of the V or III column of the periodic table of elements gives rise to a PN junction. The so obtained structure is then subjected to thermal treatment in the range 400.degree.-1100.degree. C.

REFERENCES:
patent: 3634711 (1972-01-01), Barber et al.
patent: 5249195 (1993-09-01), Feldman et al.
patent: 5322813 (1994-06-01), Beach
patent: 5363398 (1994-11-01), Glass et al.
Ennen, H.; Pomrenke, G.; Axmann, A.; Eisele, K.; Haydl, W.; Schneider, J. "1.54-.mu.m electroluminescence of erbium-doped silicon grown by molecular beam epitaxy," Applied Physics Letters 46(4):381-383, 1985.
Favennec, P. N.; L'Haridon, H.; Moutonnet, D.; Salvi, M.; Gauneau, M. "Optical activation of Er.sup.3' implanted in silicon by oxygen impurities," Japanese Journal of Applied Physics 29(4):L524-L526, 1990.

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