Electro-luminescent material, solid state electro-luminescent de

Details Electro-luminescent material, solid state electro-luminescent de Electro-luminescent material, solid state electro-luminescent de

1995-10-17

1997-09-16

Ryan, Patrick

Stock material or miscellaneous articles

Composite

Of inorganic material

428917, 257 94, 257101, 257102, 257103, 313502, 313503, 313506, 313509, 427526, 427527, 427529, H05B 3320, C09K 1159

Patent

active

056679050

ABSTRACT:
An electro-luminescent material and solid state electro-luminescent device comprising a mixed material layer formed of a mixture of silicon and silicon oxide doped with rare earth ions so as to show intense room-temperature photo- and electro-luminescence is described. The luminescence is due to internal transitions of the rare earth ions. The mixed material layer has an oxygen content ranging from 1 to 65 atomic % and is produced by vapor deposition and rare earth ions implant. A separated implant with elements of the V or III column of the periodic table of elements gives rise to a PN junction. The so obtained structure is then subjected to thermal treatment in the range 400.degree.-1100.degree. C.

REFERENCES:
patent: 5077143 (1991-12-01), Barraclough et al.
patent: 5322813 (1994-06-01), Beach
Ennen, H.; Pomrenki, G.; Axmann, A.; Eisele, K.; Haydl, W.; Schneider, J.; "1.54-.mu.m electroluminescence of erbium-doped silicon grown by molecular beam epitaxy," Applied Physics Letters 46(4): 381-383, 1985.
Favennec, P.N.; L'Haridon, H.; Moutonnet, D.; Salvi, M.; Gauneau, M., "Optical Activation of Er.sup.3+ Implanted in Silicon by Oxygen Impurities," Japanese Journal of Applied Physics 29(4): L524-L526, 1990.

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