Chemistry: electrical and wave energy – Apparatus – Electrolytic
Reexamination Certificate
2006-11-21
2010-10-19
Wilkins, III, Harry D (Department: 1795)
Chemistry: electrical and wave energy
Apparatus
Electrolytic
C204S242000, C204S279000, C205S662000, C205S663000, C205S668000
Reexamination Certificate
active
07815778
ABSTRACT:
A polishing pad includes at least one conductive polishing element supported by a compressible under layer having conductive patterning therein, the conductive patterning adapted to permit coupling of a potential to the conductive polishing element; a guide plate above the compressible under layer, the guide plate having a hole through which the polishing element passes and further having a cathodic element connected thereto; and a slurry distribution layer adhered to the guide plate opposite the compressible under layer. The polishing pad may further include a proton exchange membrane placed over the cathodic element. A semiconductor wafer having a metal film thereon may be polished using the polishing pad by placing the wafer in contact with the polishing element, applying anodic current to the polishing element and cathodic current to the cathodic element, and polishing with an anodic solution. For copper films, a sulfuric acid-copper sulfate solution may be used.
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Semiquest Inc.
Sonnenschein Nath & Rosenthal LLP
Wilkins, III Harry D
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