Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2007-10-16
2007-10-16
Toledo, Fernando L. (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S678000, C257SE31029
Reexamination Certificate
active
11265449
ABSTRACT:
Non-volatile, resistance variable memory devices, integrated circuit elements, and methods of forming such devices are provided. According to one embodiment of a method of the invention, a memory device can be fabricated by depositing a chalcogenide material onto a first (lower) electrode, sputter depositing a thin diffusion layer of a conductive material over the chalcogenide material, diffusing metal from the diffusion layer into the chalcogenide material resulting in a metal-comprising resistance variable material, and then plating a conductive material to a desired thickness to form a second (upper) electrode. In another embodiment, the surface of the chalcogenide layer can be treated with an activating agent such as palladium, a conductive metal can be electrolessly plated onto the activated areas to form a thin diffusion layer, metal ions from the diffusion layer can be diffused into the chalogenide material to form a resistance variable material, and a conductive material plated over the resistance variable material to form the upper electrode. The invention provides a process for controlling the diffusion of metal into the chalcogenide material to form a resistance variable material by depositing the mass of the upper electrode by a metal plating technique.
REFERENCES:
patent: 5914893 (1999-06-01), Kozicki et al.
patent: 5925415 (1999-07-01), Fry et al.
patent: 6084796 (2000-07-01), Kozicki et al.
patent: 6111264 (2000-08-01), Wolstenholme et al.
patent: 6189582 (2001-02-01), Reinberg et al.
patent: 6348365 (2002-02-01), Moore et al.
patent: 6375062 (2002-04-01), Higdon et al.
patent: 6503830 (2003-01-01), Miyata
patent: 6518198 (2003-02-01), Klein
patent: 6638820 (2003-10-01), Moore
patent: 6653193 (2003-11-01), Gilton
patent: 6660136 (2003-12-01), Li et al.
patent: 6709887 (2004-03-01), Moore et al.
patent: 6709958 (2004-03-01), Li et al.
patent: 6710423 (2004-03-01), Moore et al.
patent: 6727192 (2004-04-01), Moore et al.
patent: 6730547 (2004-05-01), Li et al.
patent: 6751114 (2004-06-01), Gilton et al.
patent: 6784018 (2004-08-01), Campbell et al.
patent: 6800504 (2004-10-01), Li et al.
patent: 6812087 (2004-11-01), Gilton et al.
patent: 6881623 (2005-04-01), Campbell et al.
patent: 6955940 (2005-10-01), Campbell et al.
patent: 2002/0098711 (2002-07-01), Klein
patent: 2002/0123248 (2002-09-01), Moore et al.
patent: 2002/0168852 (2002-11-01), Harshfield et al.
patent: 2003/0027416 (2003-02-01), Moore
patent: 2003/0153143 (2003-08-01), Klein
patent: 2003/0215978 (2003-11-01), Maimon et al.
Wolf et al, Silicon Processing for the VLSI ERA vol. 1: Process Technology; p. 161; Lattice Press, 1986; Sunset Beach, California.
Micro)n Technology, Inc.
Toledo Fernando L.
Whyte Hirschboeck Dudek SC
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