Electro-absorption type semiconductor optical modulator

Details Electro-absorption type semiconductor optical modulator Electro-absorption type semiconductor optical modulator

1996-02-28

1998-09-22

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

In combination with or also constituting light responsive...

257 84, 257101, 257103, 257184, 372 50, H01L 2715

Patent

active

058118381

ABSTRACT:
A semiconductor optical device includes, a monolithically integrated electro-absorption type optical modulator and a light source. A striped light-absorbing layer is formed on an n-type InP substrate, an i-type InP burying layer is formed on both sides of the striped light-absorbing layer, and a p-type burying layer is formed so as to cover the light-absorbing layer and the i-type InP layer. The i-type InP layer underlying the burying layer reduces the capacitance of the pn junction between the burying layer and the n-type InP substrate remarkably to enable the high-speed modulating operation of the semiconductor electro-absorption type optical device. The semiconductor optical device is fabricated by; forming two masking stripes of silicon oxide on the surface of an n-type InP substrate, forming a double heterostructure layer consisting of an n-type InP cladding layer, a p-type InP cladding layer and a light-absorbing layer interposed between the n-type and the p-type InP cladding layer, removing the respective inner edge portions of the two masking stripes, and forming a burying layer consisting of an i-type InP layer and a p-type InP layer.

REFERENCES:
patent: 5679603 (1997-10-01), Kimura et al.

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