Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2006-07-07
2010-10-05
Cao, Phat X (Department: 2814)
Coherent light generators
Particular active media
Semiconductor
C372S043010, C372S044010, C372S050100, C372S050110
Reexamination Certificate
active
07809038
ABSTRACT:
In a conventional EA/DFB laser, since the temperature dependence of the operation wavelength of the EA portion is substantially different from that of the DFB portion, the temperature range over which a stable operation is possible is small. In the case of using the EA/DFB laser as a light emission device, an uncooled operation is not possible. An EA/DFB laser which does not require a temperature control mechanism is proposed.A quantum well structure in which a well layer made of any one of InGaAlAs, InGaAsP, and InGaAs, and a barrier layer made of either one of InGaAlAs or InAlAs is used for an optical absorption layer of an EA modulator. By properly determining detuning at a temperature of 25° C. and a composition wavelength of the barrier layer in the quantum well structure used for the optical absorption layer, it can be realized to suppress the insertion loss, maintain the extinction ratio, and reduce chirping simultaneously over a wide temperature range from −5° C. to 80° C.
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Cao Phat X
Garrity Diana C
Mattingly & Malur, P.C.
Opnext Japan, Inc.
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