Electro-absorption modulator device and methods for...

Optical: systems and elements – Optical modulator – Light wave temporal modulation

Reexamination Certificate

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C359S240000, C359S245000, C359S321000, C359S263000, C359S278000, C257S012000, C257S014000, C257S017000, C257S020000, C257S021000, C257S079000, C257S431000, C372S026000, C372S045010, C372S050100, C372S050110, C398S183000

Reexamination Certificate

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11151610

ABSTRACT:
An electro-absorption light intensity modulator device is provided that comprises a first and a second layer disposed relative to the first layer so as to provide a light-absorbing optical confinement region. The first layer comprises a first insulator layer, and the light-absorbing optical confinement region comprises at least one quantum-confined structure. The at least one quantum-confined structure possesses dimensions such, that upon an application of an electric field in the at least one quantum-confined structure, light absorption is at least partially due to a transition of at least one carrier between a valence state and a conduction state of the at least one quantum-confined structure. A method is also provided for fabricating an electro-absorption light intensity modulator device. The method comprises providing a first insulator layer, disposing a light absorption region over the first insulator layer, and disposing a second insulator layer over the light absorption region, wherein light absorption region comprises at least one quantum-confined structure. The at least one quantum-confined structure possesses dimensions such that, upon an application of an electric field in the at least one quantum-confined structure, light absorption is at least partially due to a transition of at least one carrier between a valence state and a conduction state of the at least one quantum-confined structure.

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