Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2006-10-10
2006-10-10
Menefee, James (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S026000, C359S245000
Reexamination Certificate
active
07120183
ABSTRACT:
An electra-absorption modulator and electra-absorption modulated laser are described that include a semiconductor layer having an electrically controllable absorption. The material composition of the semiconductor layer is chosen so that the semiconductor layer is substantially transparent to light propagating through the semiconductor layer when a substantially zero or a reverse bias voltage is applied across the semiconductor layer at operating temperatures of the electro-absorption modulator that are substantially greater than 25 degrees Celsius.
REFERENCES:
patent: 4993032 (1991-02-01), Bradley
patent: 5043991 (1991-08-01), Bradley
patent: 5402259 (1995-03-01), Lembo et al.
patent: 5742423 (1998-04-01), Ido et al.
patent: 5760939 (1998-06-01), Nagarajan et al.
patent: 5771257 (1998-06-01), Takiguchi et al.
patent: 5825525 (1998-10-01), Harwit
patent: 5926493 (1999-07-01), O'Brien et al.
patent: 5933265 (1999-08-01), Nagarajan
patent: 6014392 (2000-01-01), Imai et al.
patent: 6134368 (2000-10-01), Sakata
patent: 6150667 (2000-11-01), Ishizaka et al.
patent: 6320688 (2001-11-01), Westbrook et al.
patent: 6835585 (2004-12-01), Kim
patent: 2001/0026570 (2001-10-01), Hisanaga et al.
patent: 2002/0118713 (2002-08-01), Shirai et al.
patent: 0 558 089 (1993-09-01), None
patent: 2002261377 (2001-02-01), None
patent: 2003017798 (2003-01-01), None
Sakaino, G., et al., “Transmission Characteristics of Uncooled and Directly Modulated 1.3 micrometers Distributed Feedback Laser Diode for Serial 10Giga bit Ethernet”, IEEE 2000, no month.
Clesca B. et al, 3.2 NM Wavelength Tuning Via Temperature Control For Integrated Electroabsorption modulator/DBF Laser With High Tolerance To Chromatic Dispersion, Electronics Letters, IEE Stevenage, May 9, 1996, pp. 927-929, vol. 32, No. 10, GB.
Goto et al, Design And Performance Of A 10-Gbit/s Optical Transmitter Module, Proceedings Of The Electronic Components And Technology Conference, May 18-20, 1992, pp. 830-837, vol. Conf. 42, IEEE, New York.
Hideaki Tanaka et al, Temperature Dependence of InGaAsP Electro-Absorption Modulator Module, Proceedings Of The International Conference On Indium Phosphide Arid Related Materials, May 9-13, 1995, pp. 540-543, vol.Conf. 7, IEEE New York.
Hou H.Q. et al, Demonstration of Wide-Temperature-Range Electroabsorption Modulation Near 1.5 um Using Coupled Quantum Wells, Semiconductor Science and Technology, Oct. 1, 1996, pp. 1429-1433, vol. 11, No. 10, Institute of Physics, London.
Clesca, 3.2nm Wavelength Tuning Via Temperature Control For Integrated Electroabsorption Modulator/DFB Laser With High Tolerence To Chromatic Dispersion, Electronics Letters, May 9, 1996, pp. 927-928, vol. 32, No. 10.
Clesca, 2.5-Gbit/s, 1291-km Transmission Over Non-Dispersion-Shifted Fibre Using An Integrated Electroabsorption Modulator/DFB Laser Module, Proc. 21st Eur. Conf. on Opt.Comm., 1995, pp. 995-996, Brussels, Belgium.
Grenda Terence D.
Krasulick Stephen B.
Yu Paul Kit Lai
Menefee James
Optium Corporation
Rauschenbach Kurt
Rauschenbach Patent Law Group, LLC
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