Electrically word-erasable non-volatile memory device, and...

Details Electrically word-erasable non-volatile memory device, and... Electrically word-erasable non-volatile memory device, and...

2006-10-31

2006-10-31

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185050, C365S185130

Reexamination Certificate

active

07130219

ABSTRACT:
A memory device formed by an array of memory cells extending in rows and columns. The device is formed by a plurality of N-type wells extending parallel to the rows; each N-type well houses a plurality of P-type wells extending in a direction transverse to the rows. A plurality of main bitlines extend along the columns. Each P-type well is associated to a set of local bitlines that extend along the respective P-type well and are coupled to the drain terminals of the cells accommodated in the respective P-type well. Local-bitlines managing circuits are provided for each P-type well and are located between the main bitlines and a respective set of local bitlines for controllably connecting each local bitline to a respective main bitline.

REFERENCES:
patent: 5455790 (1995-10-01), Hart et al.
patent: 5818764 (1998-10-01), Yiu et al.
patent: 5917757 (1999-06-01), Lee et al.
patent: 6532171 (2003-03-01), Gastaldi et al.
patent: 6618315 (2003-09-01), Pio et al.
patent: 6888190 (2005-05-01), Yang et al.
patent: 7006381 (2006-02-01), Dormans et al.
patent: 2002/0154546 (2002-10-01), Pio et al.
patent: 1 178 491 (2002-02-01), None
patent: WO 03/047163 (2003-06-01), None

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