Electrically tunable semiconductor laser with ridge waveguide

Details Electrically tunable semiconductor laser with ridge waveguide Electrically tunable semiconductor laser with ridge waveguide

1989-11-03

1991-01-22

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

049875760

ABSTRACT:
Electrically tunable semiconductor laser with ridge waveguide. A semiconductor laser with MCRW structure has an intermediate layer grown on an active layer, a stripe-shaped tuning layer that is flanked by a first lateral region having a first tuning contact and by a second lateral region having a second tuning contact, a cover layer and a contact layer. The supply of power occurs via a substrate contact and via a ridge contact and the laser is tunable with currents injected into the tuning layer via the tuning contacts.

REFERENCES:
patent: 4408330 (1983-10-01), An
patent: 4503540 (1985-03-01), Nakashima et al.
patent: 4747110 (1988-05-01), Takahashi et al.
"Continuously Tunable Distributed Feedback Laser Diode", by N. K. Dutta et al, Appl. Phys. Letter, 47, 981-983, (1985).

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