Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-04-11
2006-04-11
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S015000, C257S020000, C257S024000
Reexamination Certificate
active
07026641
ABSTRACT:
A method of fabricating a tunable quantum dot apparatus, comprising: forming multi-quantum wells sandwiched substantially between at least two barrier layers; spin coating a non-continuous mask onto at least one of said barrier layers; forming a gate material onto the mask, wherein the non-continuity of the mask substantially prevents formation of a continuous gate material layer; lifting off at least a portion of the gate material; self isolating the gate material; and, forming a top contact onto at least a portion of said barrier layers
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Chan Winston Kong
Mohseni Hooman
Crane Sara
Lowenstein Sandler
Sarnoff Corporation
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