Electrically-tunable infrared detectors and method based on intr

Details Electrically-tunable infrared detectors and method based on intr Electrically-tunable infrared detectors and method based on intr

1997-12-04

1999-11-02

Healy, Brian

Coherent light generators

Particular active media

Semiconductor

372 43, 372 44, 372 50, 257 14, 257 21, 2503381, 2503384, 250340, H01S 319, H01L 2906, G01J 500

Patent

active

059783990

ABSTRACT:
A quantum well infrared detector comprised of a quantum well semiconductor structure having two adjacent quantum states. The structure is electrically tunable by photon induced resonant tunneling between the quantum wells. An infrared tunable detector device having a large responsivity, sharp line width and wide tunability is defined by the following characteristics: a transmission matrix element in the range of 1.1.times.10.sup.17
m to 1.5.times.10.sup.17
m; and a tuning distance in the range of 20 .ANG. to of 70 .ANG..

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