Electrically reprogrammable nonvolatile memory device

Details Electrically reprogrammable nonvolatile memory device Electrically reprogrammable nonvolatile memory device

1991-11-21

1994-05-24

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 61, 257212, 257314, 257607, H01L 4500

Patent

active

053151313

ABSTRACT:
An electrically plastic device comprising an amorphous silicon semiconductor layer including movable dopant formed between a pair of electrodes and; at least one gate electrode formed on said amorphous silicon semiconductor layer through an insulation layer or a high resistance layer; whereby the operation of said gate electrode controls the dopant distribution of said amorphous semiconductor layer, thereby varying the electrical conductivity thereof.

REFERENCES:
patent: 4839700 (1989-06-01), Ramesham et al.
patent: 5153681 (1992-10-01), Kishimoto et al.
patent: 5172204 (1992-12-01), Hartstein
Solid State Communication, vol. 73, No. 5, pp. 323-326, 1990 R. Konenkamp and E. Wild.

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