Electrically reprogrammable nonvolatile floating gate semi-condu

Details Electrically reprogrammable nonvolatile floating gate semi-condu Electrically reprogrammable nonvolatile floating gate semi-condu

1975-11-03

1977-01-18

Larkins, William D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 23, 357 41, 357 54, 357 59, H03K 500, H01L 2978, H01L 2702, H01L 2934

Patent

active

040041590

ABSTRACT:
A semiconductor memory device comprising a composite structure of semiconductor-insulation layer-floating gate-insulation layer-control gate, in which a periphery of said floating gate is formed to extend up to and immediately above at least one of source and drain regions, such that both overlap each other through the insulation layer therebetween of silicon dioxide and of a thickness of 200 to 400A for more than 0.35 microns in length but not exceeding two times the distance between the source and drain regions. In erasing the contents written in the inventive memory device, a voltage is applied between the substrate and at least one of the source and drain regions in a reverse bias direction with respect to a junction therebetween, while the control gate is supplied with the same potential as that of the substrate or grounded, said erasing voltage being selected to a relatively small value sufficient to cause a Fowler-Nordheim tunnel phenomenon through the first insulation layer between the floating gate and at least one of the source and drain regions at said overlapping area.

REFERENCES:
patent: 3660819 (1972-05-01), Frohman-Bentchkowsky
patent: 3797000 (1974-03-01), Agusta et al.
patent: 3825945 (1974-07-01), Masuoka
patent: 3825946 (1974-07-01), Frohman-Bentchkowsky
patent: 3836992 (1974-09-01), Abbas et al.
patent: 3868187 (1975-02-01), Masuoka
patent: 3893151 (1975-07-01), Bosselaar et al.
patent: 3919711 (1975-11-01), Chou
Abbas et al., "Leakage Characterization of Dielectric Materials", IBM Technical Disclosure Bulletin, vol. 16, (July 1973), p. 407.
Lenzlinger et al., "Fowler-Nordheim Tunneling into Thermally Grown SiO.sub.2 ", J. of Applied Physics, vol. 40, (Jan. 1969), p. 278-283.

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