Electrically pumped semiconductor active region with a...

Details Electrically pumped semiconductor active region with a... Electrically pumped semiconductor active region with a...

2005-12-20

2005-12-20

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S623000, C257S625000, C257S080000, C257S081000, C257S082000, C257S012000

Reexamination Certificate

active

06977424

ABSTRACT:
An electrically pumped optical device includes a semiconductor active region and a backward diode. Both of these structures are located in the current path of the optical device, which is oriented primarily vertically. The active region has a finite extent along at least one lateral dimension. The overall structure improves the electrical performance of the device.

REFERENCES:
patent: 6730990 (2004-05-01), Kondo et al.
“88°, Continuous-Wave Operation of 1.55 μm Vertical-Cavity Surface-Emitting Lasers.” By Eric Hall, et al. Electrical and Computer Engineering Dept., University of California. Santa Barbara, CA 93106. 1 pg.
“1-mW CW-RT. Monolithic VCSEL at 1.55. μm.” by J. Boucart, et al. IEEE Photonics Technology Letters, vol. 11, No. 6. Jun. 1999. pp. 629-631.
“Lateral Electron Current Operation of Vertical Cavity Surface Emitting Lasers with Buried Tunnel Contact Hole Sources.” By J.J. Wierer et al. Electrical Engineering Research Laboratory and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign. Urbana, Illinois 61801. vol. 71. No. 24. Dec. 15, 1997. pp. 3468-3470.

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