Electrically pulsed charge regenerator for semiconductor charge

Electrical transmission or interconnection systems – Personnel safety or limit control features – Interlock

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307221D, 357 24, H01L 2978, G11C 1928

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active

039860590

ABSTRACT:
A charge regenerator for a semiconductor charge transfer device is disclosed in which the regenerator contains an input diode which is subjected to a pulsed voltage. The signal to be regenerated is applied to a control gate electrode which controls the surface potential of the underlying semiconductor surface region located between the input diode and an auxiliary transfer cell feeding an array of output charge transfer cells. After termination of the diode pulse, charges flow back from the auxiliary transfer cell to the input diode through the control gate region such that the charge remaining in the auxiliary transfer cell is independent of the signal level on the control gate so long as this signal level is above a threshold for the injection of charges from the input diode to the auxiliary transfer cell and is zero otherwise.

REFERENCES:
patent: 3623132 (1971-11-01), Green
patent: 3758794 (1973-09-01), Kosonocky
patent: 3789247 (1974-01-01), Beausoleil et al.
patent: 3819954 (1974-06-01), Butler et al.
patent: 3876989 (1975-04-01), Bankowski et al.
patent: 3881117 (1975-04-01), Tompsett
Terman, "Charge-Coupled Device Shift Register Read/Write/Regeneration Circuit," IBM Tech. Discl. Bull., vol. 14, No. 12, pp. 3784-3785, May 1972.
Dennard et al., "Read/Write Amplifier for Charge-Coupled Device Memory," IBM Tech. Discl. Bull., vol. 14, No. 12, pp. 3722-3723, May 1972.
Dennard, "Regeneration Circuit for Charge-Coupled Device Shift Registers," IBM Tech. Discl. Bull., vol. 14, No. 12, pp. 3791-3792, May 1972.

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