Electrically programmable semiconductor device with concurrent p

Details Electrically programmable semiconductor device with concurrent p Electrically programmable semiconductor device with concurrent p

1999-02-17

2000-10-31

Elms, Richard

Static information storage and retrieval

Floating gate

Particular biasing

36518503, 3651852, 3651854, G11C 1604

Patent

active

061412538

ABSTRACT:
An electronically programmable semiconductor memory device that concurrently programs floating gate memory cells in the semiconductor memory device and verifies the programming of the memory cells is disclosed. Source-side voltage monitoring of the memory cells is used to verify programming concurrently with the programming of the memory cells. Threshold voltages of the memory cells are able to be programmed to three or more distinct voltage levels. Only a limited amount of die area is needed to obtain both high speed programming and concurrent verification.

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